发明名称 |
Pipeline-controlled semiconductor memory device with reduced power consumption and memory access time |
摘要 |
A semiconductor device includes a memory cell array including a plurality of memory array basic units. A first bus for transfer of address/control signals, includes a first buffer circuit operating as a pipeline register. A second bus for bidirectional transfer of write/read data, includes a second buffer circuit operating as a pipeline register. A first control circuit sequentially sends the address/control signals on the first bus, and a second control circuit sequentially sends/receives write/read data on the second bus. |
申请公布号 |
US9412435(B2) |
申请公布日期 |
2016.08.09 |
申请号 |
US201514699027 |
申请日期 |
2015.04.29 |
申请人 |
Renesas Electronics Corporation |
发明人 |
Hirobe Atsunori |
分类号 |
G11C7/10;G11C11/4093 |
主分类号 |
G11C7/10 |
代理机构 |
Foley & Lardner LLP |
代理人 |
Foley & Lardner LLP |
主权项 |
1. A semiconductor device comprising:
a first bus coupled to a first memory array; a second bus coupled to a second memory array and coupled to the first bus through a first pipeline buffer; a first control circuit coupled between the first bus and a third bus and being responsive to a read command for receiving a first data outputted from the first memory array and a second data outputted from the second memory array through the first pipeline buffer and outputting the first and the second data to the third bus; a fourth bus coupled to the first memory array via a first buffer; a fifth bus coupled to the second memory array via a second buffer, the first pipeline buffer being different from the first buffer and the second buffer; and a second control circuit configured to send address/control signals to the first buffer or second buffer via a respective of the fourth bus and the fifth bus. |
地址 |
Kanagawa JP |