MIS-IL silicon solar cell with passivation layer to induce surface inversion

摘要

The present invention relates generally to a photovoltaic solar cell device and more particularly, to a structure and method of inducing charge inversion in a silicon substrate by using a highly charged passivation layer on an upper side of the silicon substrate. A positively charged passivation layer comprising hafnium oxide may be formed on an insulating layer covering an upper surface of a p-doped silicon substrate and on a metal contact to induce a strong inversion layer in an upper portion of the p-doped silicon substrate.

主权项

1. A method comprising:
forming an insulating layer on an upper surface of a substrate; forming a metal contact on the insulating layer, the insulating layer separates the metal contact from the substrate; conformally forming a positively charged metal oxide layer on an upper surface of the insulating layer and covering the metal contact, the positive charge of the positively charged metal oxide layer causes an n-type region to form in an upper portion of the substrate; and forming a silicon nitride layer directly above the positively charged metal oxide layer.