| 发明名称 | Ion implantation apparatus | ||
| 摘要 | An ion implantation apparatus includes: a plurality of units for accelerating an ion beam generated in an ion source; and a plurality of units for adjusting a scan beam and implanting ions into a wafer. A horizontal U-shaped folder type beamline having opposite long straight portions includes the plurality of units for adjusting the scan beam in a long straight portion to have substantially the same length as the ion source and the plurality of units for accelerating the ion beam. | ||
| 申请公布号 | US9466467(B2) | 申请公布日期 | 2016.10.11 |
| 申请号 | US201314096735 | 申请日期 | 2013.12.04 |
| 申请人 | Sumitomo Heavy Industries Ion Technology Co., Ltd. | 发明人 | Kabasawa Mitsuaki;Watanabe Kazuhiro;Ando Hitoshi;Inada Kouji;Yamada Tatsuya |
| 分类号 | H01J37/00;H01J37/32;H01J37/30;H01J37/317 | 主分类号 | H01J37/00 |
| 代理机构 | Michael Best & Friedrich LLP | 代理人 | Michael Best & Friedrich LLP |
| 主权项 | 1. An ion implantation apparatus comprising: a plurality of units for accelerating an ion beam generated in an ion source; and a plurality of units for adjusting a scan beam and implanting ions into a wafer, wherein a horizontal U-shaped loop-back type beamline having opposite long straight portions includes the plurality of units for adjusting the scan beam in a long straight portion to have a length substantially identical to those of the ion source and the plurality of units for accelerating the ion beam. | ||
| 地址 | Tokyo JP | ||