发明名称 |
LOAD-PROTECTION CIRCUIT USING AN FET IN A DISK DRIVE USING MULTIPLE POWER, SPECIALLY CORRELATED TO REDUCING THE SIZE OF A DISK DRIVE BOARD BY PROTECTING A LOAD FROM AN EXCESSIVE VOLTAGE BY USING A LOW-PRICED FET |
摘要 |
PURPOSE: A load protection circuit using an FET in a disk drive using multiple power is provided to protect a load from an excessive voltage by using a low-priced FET when the excessive voltage is applied, thereby reducing an increase in the unit cost while decreasing the size of a disk drive board. CONSTITUTION: The first and second power input terminals receive the first and second powers. When the second power is applied through the first power input terminal, a power controller controls the applied power to supply a power which is less than the first power to a load. The first power input terminal is connected to a drain terminal of an MOS FET, while the second power input terminal is connected to a gate terminal of the MOS FET. The load is connected to a source terminal of the MOS FET.
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申请公布号 |
KR20050018513(A) |
申请公布日期 |
2005.02.23 |
申请号 |
KR20030056435 |
申请日期 |
2003.08.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, HO JOONG;NOH, KI HONG |
分类号 |
G11B33/12;(IPC1-7):G11B33/12 |
主分类号 |
G11B33/12 |
代理机构 |
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主权项 |
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地址 |
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