发明名称 LOAD-PROTECTION CIRCUIT USING AN FET IN A DISK DRIVE USING MULTIPLE POWER, SPECIALLY CORRELATED TO REDUCING THE SIZE OF A DISK DRIVE BOARD BY PROTECTING A LOAD FROM AN EXCESSIVE VOLTAGE BY USING A LOW-PRICED FET
摘要 PURPOSE: A load protection circuit using an FET in a disk drive using multiple power is provided to protect a load from an excessive voltage by using a low-priced FET when the excessive voltage is applied, thereby reducing an increase in the unit cost while decreasing the size of a disk drive board. CONSTITUTION: The first and second power input terminals receive the first and second powers. When the second power is applied through the first power input terminal, a power controller controls the applied power to supply a power which is less than the first power to a load. The first power input terminal is connected to a drain terminal of an MOS FET, while the second power input terminal is connected to a gate terminal of the MOS FET. The load is connected to a source terminal of the MOS FET.
申请公布号 KR20050018513(A) 申请公布日期 2005.02.23
申请号 KR20030056435 申请日期 2003.08.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, HO JOONG;NOH, KI HONG
分类号 G11B33/12;(IPC1-7):G11B33/12 主分类号 G11B33/12
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