发明名称 PLASMA PROCESSING APPARATUS AND METHOD OF PLASMA DISTRIBUTION CORRECTION
摘要 A plasma processing apparatus can prevent a sheath from becoming distorted, simplify a configuration of the apparatus, and prevent particles from attaching to a substrate. The plasma processing apparatus performs plasma processing on the substrate. A housing chamber houses the substrate. A mounting stage is disposed within the housing chamber and mounted with the substrate. An annular member is disposed in the mounting stage. A power supply unit supplies high-frequency power to the mounting stage. An observation unit optically observes the distribution of the plasma. A voltage applying unit applies a DC voltage to the annular member. A control unit sets the value of the DC voltage to be applied based on the observed plasma distribution.
申请公布号 US2009026170(A1) 申请公布日期 2009.01.29
申请号 US20080046094 申请日期 2008.03.11
申请人 TOKYO ELECTRON LIMITED 发明人 TANAKA SATOSHI;KOSHIMIZU CHISHIO;IWATA MANABU;MATSUMOTO NAOKI;ITO TORU
分类号 G01R31/00;C23F1/08 主分类号 G01R31/00
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