| 摘要 |
An embodiment relates to a UV light emitting device, a manufacturing method of the light emitting device, a light emitting package, and a lighting system. The UV light emitting device of the embodiment includes: a second conductive-type AlGaN-based first semiconductor layer (116); an active layer (114) which includes a quantum well (114W) and a quantum wall (114B) and is placed on the second conductive-type AlGaN-based first semiconductor layer (116); and a first conductive-type AlGaN-based semiconductor layer (113) which is placed on the active layer (114). The quantum well (114W) includes an Al_xIn_yGa_(1-x-y)N layer (0<=x<=1, 0<=y<=1), and the quantum wall (114B) includes an Al_pIn_qGa_(1-p-q)N layer (0<=p<=1, 0<=q<=1). The band gap energy of the quantum wall (114B) gradually increases in a direction from the first conductive-type AlGaN-based semiconductor layer (113) to the second conductive-type AlGaN-based first semiconductor layer (116). |
