发明名称 |
FORMATION OF HETEROEPITAXIAL LAYERS WITH RAPID THERMAL PROCESSING TO REMOVE LATTICE DISLOCATIONS |
摘要 |
Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec. |
申请公布号 |
SG10201609869R(A) |
申请公布日期 |
2016.12.29 |
申请号 |
SG10201609869R |
申请日期 |
2014.06.25 |
申请人 |
ULTRATECH, INC |
发明人 |
HAWRYLUK, ANDREW, M.;SUNDARAM, GANESH;BHATIA, RITWIK |
分类号 |
|
主分类号 |
|
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|