发明名称 |
Gallium nitride single crystal substrate and method of producing the same |
摘要 |
<p>An n-type GaN substrate having a safe n-type dopant instead of Si which is introduced by perilous silane gas. The safe n-dopant is oxygen. An oxygen doped n-type GaN free-standing crystal is made by forming a mask on a GaAs substrate, making apertures on the mask for revealing the undercoat GaAs, growing GaN films through the apertures of the mask epitaxially on the GaAs substrate from a material gas including oxygen, further growing the GaN film also upon the mask for covering the mask, eliminating the GaAs substrate and the mask, and isolating a freestanding GaN single crystal. The GaN is an n-type crystal having carriers in proportion to the oxygen concentration. <IMAGE></p> |
申请公布号 |
EP0967664(A1) |
申请公布日期 |
1999.12.29 |
申请号 |
EP19990110229 |
申请日期 |
1999.05.26 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
MOTOKI, KENSAKU;OKAHISA, TAKUJI;MATSUMOTO, NAOKI;MATSUSHIMA, MASATO |
分类号 |
H01L21/20;H01L21/205;H01L33/00;(IPC1-7):H01L33/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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