Plasma etching process used in manufacture of half tone phase masks comprises etching a pattern in a molybdenum-silicon compound layer using a chlorine compound

摘要

Plasma etching process comprises etching a pattern in a MoSi(ON) layer using a chlorine compound. Preferred Features: An inert gas is added to the chlorine compound. The inert gas is helium, argon or nitrogen. Polymer-containing CH4 is added to the chlorine compound. O2 is added to the chlorine compound in small amounts.