| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion device having a structure that suppresses electric charges from flowing into a charge storage region from the vicinity of an element isolation.SOLUTION: A photoelectric conversion device 1 includes a semiconductor substrate SS on which a charge storage region 103 of a first conductivity type, a first semiconductor region 106 of a second conductivity type, a second semiconductor region 102 of the second conductivity type, and an element isolation configured by an insulator are arranged. The first semiconductor region is arranged so as to extend downward from between the charge storage region and the element isolation 104, and the second semiconductor region includes a part arranged under the charge storage region. With respect to an impurity concentration distribution in a depth direction of the semiconductor substrate, the charge storage region has a peak at a depth Rp1, and the first semiconductor region has a peak at a depth Rp2, and the second semiconductor region has a peak at a depth Rp3, and Rp1<Rp2<Rp3 is satisfied. When an impurity concentration at the depth Rp2 of the first semiconductor region is defined as C1, and an impurity concentration at the depth Rp3 of the second semiconductor region is defined as C2, C1>C2 is satisfied.SELECTED DRAWING: Figure 3 |
