发明名称 DISPLAY DEVICE WITH REDUCED MANUFACTURING COST AND METHOD OF MANUFACTURING THE SAME
摘要 A display device includes a gate line and a data line on a first substrate. A first passivation layer disposed thereon has a first contact hole. A second passivation layer on the first passivation layer has a second contact hole. A common electrode is disposed on the second passivation layer and a residual pattern is disposed on a drain electrode. A third passivation layer, having a third contact hole, is disposed on the common electrode. A pixel electrode, connected to the drain electrode, is disposed on the third passivation layer. A groove is defined between the first and second passivation layers. The common electrode has a open circuit from the residual pattern thereof.
申请公布号 US2016334679(A1) 申请公布日期 2016.11.17
申请号 US201615040243 申请日期 2016.02.10
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 CHOI JAEHO;KOO BONYONG
分类号 G02F1/1343;G02F1/1333;G02F1/1362;H01L27/12;G02F1/1368 主分类号 G02F1/1343
代理机构 代理人
主权项 1. A display device comprising: a first substrate; a gate line and a data line disposed on the first substrate; a first passivation layer disposed on both the gate line and the data line, the first passivation layer having a first contact hole; a second passivation layer disposed on the first passivation layer, the second passivation layer having a second contact hole; a common electrode and a residual pattern of the common electrode, the common electrode being disposed on the second passivation layer and the residual pattern of the common electrode being disposed on a drain electrode; a third passivation layer disposed on the common electrode, the third passivation layer having a third contact hole; and a pixel electrode disposed on the third passivation layer, the pixel electrode being connected to the drain electrode, wherein a groove is defined between the first passivation layer and the second passivation layer, and the common electrode includes an open circuit resulting from the residual pattern of the common electrode.
地址 YONGIN-SI KR