发明名称 NON-VOLATILE MEMORY DEVICE, MEMORY SYSTEM, AND METHODS OF OPERATING THE DEVICE AND SYSTEM
摘要 Provided is a method of operating a non-volatile memory device including a plurality of strings, each string including a plurality of memory cells vertically stacked on a substrate. The method includes performing an erase operation on memory cells corresponding to a plurality of string selection lines, performing an erase verification operation on first strings connected to a first string selection line from among the plurality of string selection lines, storing fail column information corresponding to a first fail string, which is erase-failed, from among the first strings, and performing an erase verification operation on second strings connected to a second string selection line from among the plurality of string selection lines, when the first strings are erase-passed.
申请公布号 US2016260496(A1) 申请公布日期 2016.09.08
申请号 US201614995534 申请日期 2016.01.14
申请人 YOON SEOK-MIN;CHOI MYUNG-HOON 发明人 YOON SEOK-MIN;CHOI MYUNG-HOON
分类号 G11C16/34;G11C16/14;G11C16/04 主分类号 G11C16/34
代理机构 代理人
主权项 1. A method of operating a non-volatile memory device including a plurality of strings, each string including a plurality of memory cells vertically stacked on a substrate, the method comprising: performing an erase operation on memory cells corresponding to a plurality of string selection lines; performing an erase verification operation on first strings connected to a first string selection line from among the plurality of string selection lines; storing fail column information corresponding to a first fail string, which is erase-failed, from among the first strings; and performing an erase verification operation on second strings connected to a second string selection line from among the plurality of string selection lines, when the first strings are erase-passed.
地址 SEOUL KR