发明名称 |
NON-VOLATILE MEMORY DEVICE, MEMORY SYSTEM, AND METHODS OF OPERATING THE DEVICE AND SYSTEM |
摘要 |
Provided is a method of operating a non-volatile memory device including a plurality of strings, each string including a plurality of memory cells vertically stacked on a substrate. The method includes performing an erase operation on memory cells corresponding to a plurality of string selection lines, performing an erase verification operation on first strings connected to a first string selection line from among the plurality of string selection lines, storing fail column information corresponding to a first fail string, which is erase-failed, from among the first strings, and performing an erase verification operation on second strings connected to a second string selection line from among the plurality of string selection lines, when the first strings are erase-passed. |
申请公布号 |
US2016260496(A1) |
申请公布日期 |
2016.09.08 |
申请号 |
US201614995534 |
申请日期 |
2016.01.14 |
申请人 |
YOON SEOK-MIN;CHOI MYUNG-HOON |
发明人 |
YOON SEOK-MIN;CHOI MYUNG-HOON |
分类号 |
G11C16/34;G11C16/14;G11C16/04 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
1. A method of operating a non-volatile memory device including a plurality of strings, each string including a plurality of memory cells vertically stacked on a substrate, the method comprising:
performing an erase operation on memory cells corresponding to a plurality of string selection lines; performing an erase verification operation on first strings connected to a first string selection line from among the plurality of string selection lines; storing fail column information corresponding to a first fail string, which is erase-failed, from among the first strings; and performing an erase verification operation on second strings connected to a second string selection line from among the plurality of string selection lines, when the first strings are erase-passed. |
地址 |
SEOUL KR |