SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

摘要

The disclosed subject matter provides a semiconductor structure and fabrication method thereof. In a semiconductor structure, a dielectric layer, a plurality of discrete gate structures, and a plurality of sidewall spacers are formed on a semiconductor substrate. The plurality of discrete gate structures and sidewall spacers are formed in the dielectric layer, and a sidewall spacer is formed on each side of each gate structure. A top portion of each gate structure and a top portion of the dielectric layer between neighboring sidewall spacers of neighboring gate structures are removed. A protective layer is formed on each of the remaining dielectric layer and the remaining gate structures. Contact holes are formed on the semiconductor substrate, between neighboring sidewall spacers, and on opposite sides of the protective layer on the remaining dielectric layer. A metal plug is formed in each contact hole.

主权项

1. A method for fabricating a semiconductor structure, comprising:
forming a dielectric layer, a plurality of discrete gate structures, and a plurality of sidewall spacers on a semiconductor substrate, wherein the plurality of discrete gate structures and the sidewall spacers are formed in the dielectric layer, and one sidewall spacer is formed on each side of each gate structure; removing a top portion of the dielectric layer between neighboring sidewall spacers of neighboring gate structures, wherein the top portion of the dielectric layer is located corresponding to a portion of a length of the neighboring sidewall spacers; removing a top portion of each gate structure; forming a protective layer on each of a remaining dielectric layer and a remaining gate structure; after forming the protective layer, forming contact holes on the semiconductor substrate, between neighboring sidewall spacers, and on opposite sides of the protective layer on the remaining dielectric layer; and forming a metal plug in each contact hole.