发明名称 |
NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME |
摘要 |
In a method of programming a three-dimensional nonvolatile memory device, a program loop is executed at least one time, wherein the program loop includes a programming step for programming selected memory cells among the memory cells and a verifying step for verifying whether the selected memory cells are program-passed or not. In the programming the selected memory cells, a level of a voltage being applied to a common source line connected to the strings in common may be changed. Thus, in a program operation, power consumption which is needed to charge-discharge the common source line can be decreased while increasing boosting efficiency. |
申请公布号 |
US2016343443(A1) |
申请公布日期 |
2016.11.24 |
申请号 |
US201615229158 |
申请日期 |
2016.08.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI YOON-HEE;NAM SANG-WAN;LEE KANG-BIN |
分类号 |
G11C16/10;G11C11/56;G11C16/34;G11C16/04 |
主分类号 |
G11C16/10 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
SUWON-SI KR |