发明名称 |
Plasma treatment method |
摘要 |
In a plasma equipment and a plasma treatment method of a semiconductor device capable of reducing electron shading effect and also suppressing charge damage without affecting various characteristics in plasma process, a distance between a substrate bias electrode and A counter electrode is set less than two times as long as a mean free path of electron. High frequency electric power of 100 kHz to 1 MHz is supplied to the substrate bias electrode, while high frequency electric power of 1 MHz to 100 MHz is supplied to the counter electrode.
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申请公布号 |
US5846885(A) |
申请公布日期 |
1998.12.08 |
申请号 |
US19960702161 |
申请日期 |
1996.08.23 |
申请人 |
FUJITSU LIMITED |
发明人 |
KAMATA, TAKESHI;ARIMOTO, HIROSHI;KOSUGI, MAKOTO;HASHIMOTO, KOICHI |
分类号 |
H01J37/32;H01L21/3065;(IPC1-7):H01L21/00 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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