SEMICONDUCTOR LASER DEVICE

摘要

PROBLEM TO BE SOLVED: To achieve high integration for a semiconductor laser device with double heterostructure. SOLUTION: A p-type active layer 13 is arranged on a cladding layer 12 on a semi-insulating substrate 11. On the active layer 13, a plurality of n-type cladding layers 14 are arranged separately. On the cladding layer 14, p-type electrodes 20 to 23 are arranged. On the active layer 13, n-type electrodes 30a and 30b to 33a to 33b are arranged corresponding to the p-type electrodes. The part between p-type electrodes 20 to 24 and that between the n-type electrodes 30a and 30b to 33a and 33b are a high-resistance region 18 that is made inactive electrically.