PATTERN MEASUREMENT APPARATUS AND FLAW INSPECTION APPARATUS

摘要

The purpose of the present invention is to provide a pattern measurement apparatus that appropriately assesses patterns formed by patterning methods for forming patterns that do not exist on photomasks. In order to achieve this purpose, the present invention provides a pattern measurement apparatus comprising a calculation apparatus that measures the dimensions of patterns formed on a sample by using data acquired by irradiating the sample with a beam, wherein the calculation apparatus extracts pattern coordinate information on the basis of the data acquired by irradiating the sample with the beam, and uses the coordinate information to generate measurement reference data used when performing dimension measurements of the pattern.