发明名称 |
Integrated semiconductor memory having memory cells with a ferroelectric memory property |
摘要 |
An integrated semiconductor memory has memory cells with a ferroelectric memory property. The memory cells are in each case connected between a column line and a charge line. The column line is connected to a read amplifier which supplies an output signal. The charge line is connected to a driver circuit which provides the charge line with a given potential. In an inactive mode, the column line and the charge line are jointly connected to a connection for a common supply potential in the read amplifier or in the driver circuit. As a result, a relatively quick equalization of a potential between the lines is possible. Thus, unintended changes in the memory cell content due to interfering voltages are avoided.
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申请公布号 |
US2001038561(A1) |
申请公布日期 |
2001.11.08 |
申请号 |
US20010780305 |
申请日期 |
2001.02.09 |
申请人 |
ESTERL ROBERT;KANDOLF HELMUT;HONIGSCHMID HEINZ;ROHR THOMAS |
发明人 |
ESTERL ROBERT;KANDOLF HELMUT;HONIGSCHMID HEINZ;ROHR THOMAS |
分类号 |
G11C11/22;H01L21/8246;H01L27/105;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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地址 |
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