| 发明名称 |
SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME |
| 摘要 |
<p>A gate insulating film is formed by successively stacking a first insulating film (silicon oxide film) and a second insulating film (aluminum oxide film) on a surface of a silicon substrate. A charge capture site region is formed in the first insulating film by permitting a part of the first insulating film to contain an element (aluminum), which is at least one element constituting the second insulating film and different from the elements commonly contained in the whole first insulating film.</p> |
| 申请公布号 |
WO2007043491(A1) |
申请公布日期 |
2007.04.19 |
| 申请号 |
WO2006JP320152 |
申请日期 |
2006.10.03 |
| 申请人 |
NEC CORPORATION;NAKAGAWA, TAKASHI;SAITOU, YUKISHIGE |
发明人 |
NAKAGAWA, TAKASHI;SAITOU, YUKISHIGE |
| 分类号 |
H01L27/115;H01L21/8247;H01L29/788;H01L29/792 |
主分类号 |
H01L27/115 |
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