发明名称 Gated Diode Sense Amplifiers
摘要 A sense amplifier for use in sensing a signal in an integrated circuit comprises an amplifier portion and an output portion. The amplifier portion comprises a gated diode having a gate terminal. The output portion comprises an output transistor in signal communication with the gate terminal of the gated diode and having a source terminal. A variable source voltage acts on the source terminal of the output transistor when the sense amplifier is in operation. The variable source voltage is temporarily altered when the sense amplifier is actively sensing the signal in the integrated circuit.
申请公布号 US2009103382(A1) 申请公布日期 2009.04.23
申请号 US20070874220 申请日期 2007.10.18
申请人 LUK WING KIN;DENNARD ROBERT HEATH 发明人 LUK WING KIN;DENNARD ROBERT HEATH
分类号 G11C7/00;H01R43/00 主分类号 G11C7/00
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