INTEGRATED CIRCUIT (IC) CHIPS WITH THROUGH SILICON VIAS (TSV) AND METHOD OF FORMING THE IC

摘要

A method of forming through silicon vias (TSVs) on integrated circuit (IC) chips and the IC chips. A TSV pattern on a stack of wiring layers on the surface of the IC chip identifies TSV locations. Etching the IC chip TSV pattern opens a cup shaped through hole through the stack to the silicon substrate at each TSV pattern location. The etched stack forms a TSV hard mask open (HMO) for the silicon substrate. Via through holes etched through the silicon substrate masked by the HMO are filled with conductor connecting IC circuits, e.g., to signal lines on the bottom of the chip.

主权项

1. A method of forming through silicon vias (TSVs) on an integrated circuit (IC) chip wafer, said method comprising:
forming a through silicon via (TSV) pattern identifying a plurality of TSV locations on the surface of an IC chip wafer, said IC chip wafer including one or more IC chip die, each IC die including a plurality of circuits on a silicon substrate and a stack of wiring layers on said silicon substrate above said plurality of circuits, said surface being the surface of the top wiring layer of said stack; etching said TSV pattern through said stack, a cup shaped through hole being opened through said stack to said silicon substrate at each TSV pattern location, the etched said stack forming a TSV hard mask open (HMO) for said silicon substrate; and etching via through holes through said silicon substrate masked by said HMO.