| 发明名称 |
Porogen Bonded Gap Filling Material in Semiconductor Manufacturing |
| 摘要 |
A method for semiconductor manufacturing includes receiving a device that includes a substrate and a first layer disposed over the substrate, wherein the first layer includes a trench. The method further includes applying a first material over the first layer and filling in the trench, wherein the first material contains a matrix and a porogen that is chemically bonded with the matrix. The method further includes curing the first material to form a porous material layer. The porous material layer has a first portion and a second portion. The first portion is disposed in the trench. The second portion is disposed over the first layer. The first and second portions contain substantially the same percentage of each of Si, O, and C. The first and second portions contain substantially the same level of porosity. |
| 申请公布号 |
US2016379874(A1) |
申请公布日期 |
2016.12.29 |
| 申请号 |
US201514752097 |
申请日期 |
2015.06.26 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lin Bo-Jiun;Chang Ching-Yu;Chen Hai-Ching;Bao Tien-I |
| 分类号 |
H01L21/768;H01L23/532;H01L21/02 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for semiconductor manufacturing, comprising:
receiving a device that includes a substrate and a metal layer disposed over the substrate, wherein the metal layer includes a trench and a metal interconnect; applying a first material over the metal layer and filling in the trench and in contact with the metal interconnect, wherein the first material contains a matrix and a porogen that is chemically bonded with the matrix before the first material is applied; and curing the first material. |
| 地址 |
Hsin-Chu TW |
