| 摘要 |
<p>A method for manufacturing semiconductor device is provided to prevent a short circuit even in case of crack generation due to laser damage by depositing the nitride film gate hard mask layer. A method for manufacturing semiconductor device is comprised of steps: forming a gate conductive layer on a semiconductor substrate(100) including a cell region(I) and a fuse regions(II); removing the gate conductive layer of the fuse regions by etching it; forming the gate hard mask layer(150) on the overall fuse regions and cell region; forming the gate pattern by patterning the gate conductive layer of a cell region, gate hard mask layer and the gate hard mask layer of the fuse regions; forming the gate conductive layer by laminating a tungsten silicide layer and polysilicon layer.</p> |
