发明名称 |
ASYMMETRIC BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR AND METHOD OF FORMING SAME |
摘要 |
<p>A bi-directional transient voltage suppression device and a method of making same is provided. The method begins by providing a semiconductor substrate of a first conductivity type, and depositing a first epitaxial layer of a second conductivity type opposite the first conductivity type on the substrate. The substrate and the first epitaxial layer form a first p-n junction. A second epitaxial layer having the second conductivity type is deposited on the first epitaxial layer. The second epitaxial layer has a higher dopant concentration than the first epitaxial layer. A third layer having the first conductivity type is formed on the second epitaxial layer. The second epitaxial layer and the third layer form a second p-n junction.</p> |
申请公布号 |
EP1864318(A2) |
申请公布日期 |
2007.12.12 |
申请号 |
EP20060739593 |
申请日期 |
2006.03.24 |
申请人 |
VISHAY GENERAL SEMICONDUCTOR LLC |
发明人 |
KUNG, PU-JU;HUANG, CHUN-JEN;KAO, LUNG-CHING;PENG, HUNG-JIEU |
分类号 |
H01L29/861;H01L21/20;H01L21/22;H01L21/329;H01L27/02;H01L29/06 |
主分类号 |
H01L29/861 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|