Lithographic Apparatus for Measuring Overlay Error and a Device Manufacturing Method

摘要

A lithographic apparatus including an inspection apparatus can measure the overlay error of a target in a scribelane is measured. The overlay error of the required feature in the chip area may differ from this due to, for example, different responses to the exposure process. A model is used to simulate these differences and thus a more accurate measurement of the overlay error of the feature determined.

主权项

1. A lithographic apparatus comprising:
an illumination system configured to condition a radiation beam; a support structure configured to support a patterning device, the patterning device being configured to pattern the radiation beam; a projection system configured to project a patterned radiation beam onto a substrate; and an inspection apparatus comprising:
a detector configured measure a property of radiation reflected by the substrate having a device feature in a chip area and a target; anda processing unit operatively coupled to the detector and configured to determine an overlay error of the device feature by:
determining an overlay error of the target,determining a difference between a determined overlay error of the target and the overlay error of the device feature due to a characteristic of the lithographic apparatus,determining a difference between the determined overlay error of the target and the overlay error of the device feature due to a difference in position between the target and the device feature on the substrate, anddetermining a difference between the determined overlay error of the target and the overlay error of the device feature due to a characteristic of the device feature.