| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photodetector which achieves accurate wavelength identification capability and simple layer structure by utilizing a rapid change of the absorptivity at specific wavelength found in an organic semiconductor thin film without use of external wavelength selection element for wavelength detection and by steepening a change in the photoelectric signal. <P>SOLUTION: In the organic semiconductor photodetector where a bottom electrode, an organic semiconductor thin film and a top electrode are sequentially stacked on a substrate, the wavelength characteristics (solid line) of the photoelectric signal actually obtained from the photodetector have steeper rate of change against the wavelength than those (dotted line) of the photoelectric signal intensity which is calculated from the optical absorptivity of the organic semiconductor thin film. <P>COPYRIGHT: (C)2008,JPO&INPIT |
