| 摘要 |
Provided is a current sensor capable of detecting an induced magnetic field by a current to be detected with higher precision. The first and second modules are provided on facing surfaces of integrated substrates, respectively, with spacers in between. Each of the first and second modules includes an element substrate, and an MR element layer. On each of the MR elements layers, provided is an MR element having a stacked structure including a pinned layer, a nonmagnetic intermediate layer, and a free layer whose magnetization direction changes according to the induced magnetic field and which exhibits an anisotropic field in a direction different from that of the magnetization of the pinned layer. The stacked structures of the MR elements are provided in a same layer level.
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