| 摘要 |
<p>A semiconductor storage device is capable of discriminating information stored in memory cells with high accuracy even if a gap that separates distributions of cell current values between data 0 and data 1 among a plurality of memory cells in a memory cell array becomes extremely narrow or overlapped with each other. A first memory cell MC 11 and a second memory cell MC 2 are adjacent to each other, and a first bit line BL 1 to which a first input/output terminal of the first memory cell MC 11 is connected as well as a second bit line BL 2 to which a second input/output terminal of the second memory cell MC 12 is connected are connected to inputs of a sense amplifier SA 1, respectively. A second input/output terminal of the first memory cell MC 11 and a first input/output terminal of the second memory cell MC 12 are connected to a common line COM.</p> |
