Method and apparatus for suppressing metal-gate cross-diffusion in semiconductor technology

摘要

An inverter includes: a PMOS comprising: a p-type source region, a p-type drain region, a p-channel region between the p-type source region and the p-type drain region, and a PMOS metal gate region; a NMOS, comprising: an n-type source region, an n-type drain region, an n-channel region between the n-type source region and the n-type drain region, and a NMOS metal gate region; an insulating layer above the p-channel region and the n-channel region, wherein the PMOS metal gate region and the NMOS metal gate region are above the insulating layer; and a gate contact between the NMOS metal gate region and the PMOS metal gate region.

主权项

1. An inverter, comprising:
a PMOS comprising:
a p-type source region,a p-type drain region,a p-channel region between the p-type source region and the p-type drain region, anda PMOS metal gate region comprising one or more PMOS work function layers located above an insulating layer and a PMOS metal gate layer located above the one or more PMOS work function layers, the PMOS metal gate layer consisting of metal; a NMOS, comprising:
an n-type source region,an n-type drain region,an n-channel region between the n-type source region and the n-type drain region, anda NMOS metal gate region comprising one or more NMOS work function layers located above the insulating layer and a NMOS metal gate layer located above the one or more NMOS work function layers, the NMOS metal gate layer consisting of metal; the insulating layer being above the p-channel region and the n-channel region, wherein the PMOS metal gate region and the NMOS metal gate region are above the insulating layer; and a gate contact having a frusto-conical cross-section and being disposed between the NMOS metal gate region and the PMOS metal gate region.