Interconnects with fully clad lines

摘要

A metallization layer including a fully clad interconnect and a method of forming a fully clad interconnect. An opening is formed in a dielectric layer, wherein the dielectric layer has a surface and the opening includes walls and a bottom. A diffusion barrier layer and an adhesion layer are deposited on the dielectric layer. An interconnect material is deposited on the dielectric layer and reflowed into the opening forming an interconnect. An adhesion capping layer and diffusion barrier capping layer are deposited over the interconnect. The interconnect is surrounded by the adhesion layer and the adhesion capping layer and the adhesion layer and the adhesion capping layer are surrounded by the diffusion barrier layer and the diffusion capping layer.

主权项

1. A fully-cladded interconnect device, comprising:
a base comprising a dielectric layer said dielectric layer comprising a first region and at least one second region adjacent said first region, the at least one second region having a first upper surface; an interconnect structure on the first region, the interconnect structure comprising:
a diffusion barrier layer on the first region of the dielectric layer, the diffusion barrier layer comprising a first horizontal portion on said bottom and first sidewalls on said opposing first and second sides, wherein the first sidewalls extend generally perpendicular to said first horizontal portion and comprise a first inner surface, a first outer surface, and a second upper surface;an adhesion layer at least partially defining a cavity, wherein the adhesion layer comprises a second horizontal portion on said first horizontal portion and second sidewalls on the first inner surface of said first sidewalls, the second sidewalls comprising a second inner surface, a second outer surface, and a third upper surface;an interconnect disposed in said cavity, said interconnect comprising opposing interconnect side surfaces, an interconnect bottom surface, and an interconnect upper surface, wherein said opposing interconnect side surfaces and said interconnect bottom surface are in contact with said second sidewalls and second horizontal portion of said adhesion layer, respectively; anda capping layer disposed on said interconnect upper surface said capping layer comprising an adhesion capping layer in contact with said interconnect upper surface of said interconnect and a diffusion barrier capping layer disposed on said adhesion capping layer, the diffusion barrier capping layer comprising a fourth upper surface; wherein:
the first upper surface is recessed below the second and third upper surfaces; andthe fourth upper surface is recessed below said second and third upper surfaces.