APPARATUS FOR DOPING IMPURITIES, METHOD FOR DOPING IMPURITIES, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

An apparatus for doping impurities includes: a bath reserving liquid containing impurity elements; a liquid transport device transporting the liquid on a surface of a semiconductor substrate; a laser optical system which scans and irradiates light pulses of laser onto the surface of the semiconductor substrate; an X-Y manipulator moving the semiconductor substrate; and an arithmetic and control unit which controls the liquid transport device and X-Y manipulator. Flow rate of the liquid and scanning velocity of the light pulses are determined, by a characteristic dimension of the irradiation area along the flow direction of the liquid, an overlapping ratio of the irradiation area, and the radius of a bubble generated in the liquid. The impurity elements are doped into a part of the inside of the semiconductor substrate at the determined flow rate and scanning velocity.

主权项

1. An apparatus for doping impurities comprises:
a liquid reservoir reserving liquid containing impurity elements so that the liquid is in contact with a surface of a semiconductor substrate; a liquid transport device transporting the liquid on the surface of the semiconductor substrate at a fixed flow rate; a laser optical system which scans and irradiates light pulses onto the surface of the semiconductor substrate through the liquid so as to forming the irradiation area having fixed dimensions; an X-Y manipulator freely moving the semiconductor substrate in directions X and Y with the liquid reservoir interposed, the directions X and Y being defined in a plane parallel to the major surface of the semiconductor substrate; and an arithmetic and control unit which controls the liquid transport device and X-Y manipulator and determines flow rate of the liquid and scanning velocity of the light pulses by a characteristic dimension of the irradiation area along the flow direction of the liquid, an overlapping ratio of the irradiation area, and the radius of a bubble generated in the liquid, wherein the liquid is transported at the determined flow rate while moving the semiconductor substrate at the determined scanning velocity, the impurity elements are doped into a part of the inside of the semiconductor substrate.