发明名称 |
Active matrix device including thin film transistors |
摘要 |
A method of fabricating silicon TFTs (thin-film transistors) is disclosed. The method comprises a crystallization step by laser irradiation effected after the completion of the device structure. First, amorphous silicon TFTs are fabricated. In each of the TFTs, the channel formation region, the source and drain regions are exposed to laser radiation illuminated from above or below the substrate. Then, the laser radiation is illuminated to crystallize and activate the channel formation region, and source and drain regions. After the completion of the device structure, various electrical characteristics of the TFTs are controlled. Also, the amorphous TFTs can be changed into polysilicon TFTs.
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申请公布号 |
US6166399(A) |
申请公布日期 |
2000.12.26 |
申请号 |
US19990233143 |
申请日期 |
1999.01.19 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ZHANG, HONGYONG;KUSUMOTO, NAOTO |
分类号 |
H01L21/265;G02F1/1362;H01L21/20;H01L21/268;H01L21/336;H01L29/78;H01L29/786;(IPC1-7):H01L29/04;H01L31/036;H01L31/037;H01L31/20;H01L27/148 |
主分类号 |
H01L21/265 |
代理机构 |
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地址 |
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