发明名称 |
FERROELECTRIC STACKED-LAYER STRUCTURE, FIELD EFFECT TRANSISTOR, AND FERROELECTRIC CAPACITOR AND FABRICATION METHODS THEREOF |
摘要 |
A ferroelectric stacked-layer structure is fabricated by forming a first polycrystalline ferroelectric film on a polycrystalline or amorphous substrate, and after planarizing a surface of the first ferroelectric film, laminating on the first ferroelectric film a second thin ferroelectric film having the same crystalline structure as the first ferroelectric film. A field effect transistor or a ferroelectric capacitor includes the ferroelectric stacked-layer structure as a gate insulating film or a capacitor film.
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申请公布号 |
US2009152607(A1) |
申请公布日期 |
2009.06.18 |
申请号 |
US20080328275 |
申请日期 |
2008.12.04 |
申请人 |
TANAKA HIROYUKI;KATO YOSHIHISA;KANEKO YUKIHIRO |
发明人 |
TANAKA HIROYUKI;KATO YOSHIHISA;KANEKO YUKIHIRO |
分类号 |
H01L29/78;B32B9/00;H01G4/06;H01L21/04 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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