| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition for liquid immersion exposure, superior in pattern profile and in pattern fall properties being a resist composition used in a semiconductor manufacturing process, such as IC, manufacturing of a circuit board, such as a liquid crystal and a thermal head and the other photofabrication process, and to provide a pattern forming method that uses the composition. <P>SOLUTION: The positive resist composition for the liquid immersion exposure contains (A) a resin for increasing the dissolution rate for an alkalic development liquid by action of acid, having a cycloparaffin structure, and (B) a compound for generating acid by the irradiation of an active beam or radiation. The ratio of a component having a molecular weight of 1,000 or smaller in the resin (A) is 20% or lower with respect to the whole area, in the pattern area of gel permeation chromatography. In addition, the pattern forming method that uses the composition it is provided. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
