| 摘要 |
PROBLEM TO BE SOLVED: To achieve a semiconductor device having high insulating properties between a semiconductor substrate and a through electrode.SOLUTION: A semiconductor device 10 comprises: a semiconductor substrate 11 including a first principal surface 11a on which an element circuit layer 30 is provided and a second principal surface 11b on the opposite side to the first principal surface 11a; a through hole 20 which pierces from the first principal surface 1a to the second principal surface 11b and in which a scallop width S3 and a notch depth S4 on the first principal surface 11a side are smaller than a scallop width S1 and a notch depth S2 on the second principal surface 11b side; an insulation layer 40 provided on an inner peripheral surface of the through hole 20; and a through electrode 50 which is provided on an inner peripheral surface of the insulation layer 40 and connected to a wiring layer 33 of an element circuit layer 30, and which penetrates to the second principal surface 11b. In the semiconductor device having such a configuration, uniformity and adhesion of the insulation layer 40 can be improved by controlling the scallop width and the notch depth. |
