发明名称 Substrate processing method and substrate processing apparatus
摘要 A substrate processing method for processing a substrate by supplying a processing gas into a processing chamber and allowing the processing gas to react on the substrate in the processing chamber by using a substrate processing apparatus includes the processing chamber accommodating the substrate, a processing gas supply unit for supplying the processing gas into the processing chamber, and a gas exhaust unit, for exhausting the processing chamber, having a turbo molecular pump. The method controls a processing uniformity by controlling a revolution speed of the turbo molecular pump while maintaining a pressure in the processing chamber to a predetermined level when by-products having a larger molecular mass compared to the processing gas are generated by the reaction of the processing gas.
申请公布号 US9406524(B2) 申请公布日期 2016.08.02
申请号 US201414517081 申请日期 2014.10.17
申请人 TOKYO ELECTRON LIMITED 发明人 Takahashi Hiroyuki;Kwon Taechun
分类号 H01L21/302;H01L21/311;H01L21/67 主分类号 H01L21/302
代理机构 代理人
主权项 1. A substrate processing method for use with a substrate processing apparatus, the substrate processing apparatus comprising: a processing chamber, a processing gas supply unit for supplying a processing gas into the processing chamber, and a gas exhaust unit for exhausting the processing chamber, wherein the gas exhaust unit comprises a turbo molecular pump and an automatic pressure control valve, the method comprising: loading a substrate into the processing chamber; processing the substrate by supplying the processing gas into the processing chamber and causing the processing gas to react on the substrate in the processing chamber, wherein during said processing the substrate, by-products having larger molecular masses than the processing gas are generated; and controlling, during said processing the substrate, a processing uniformity by setting a revolution speed of the turbo molecular pump to a lower level than a maximum level while maintaining a pressure in the processing chamber to a predetermined level by controlling a gas exhaust amount using the automatic pressure control valve, wherein by said controlling the processing uniformity, a partial pressure of the by-products during said processing the substrate is lower than that in a case where the revolution speed of the turbo molecular pump is set to the maximum level while maintaining the pressure in the processing chamber to the predetermined level by controlling the gas exhaust amount using the automatic pressure control valve, so that the processing uniformity is improved during said processing the substrate.
地址 Tokyo JP