| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing apparatus and method which can prevent dishing, erosion or the like from occurring to improve the step height characteristics and the polishing rate by blowing a gas onto a polishing pad during polishing of a substrate such as a semiconductor wafer to control the temperature of a surface (polishing surface) of a polishing pad.SOLUTION: The polishing method comprises pressing a substrate to be polished against a polishing pad 2 on a polishing table 1 to polish the target surface of the substrate while blowing a gas onto the polishing pad 2 to control the temperature of the polishing pad 2. In the method, a control target temperature of the polishing pad 2 is set and then monitoring of the polishing pad temperature control is initiated. If the time during which the temperature of the polishing pad 2 exceeding the set temperature continues longer than a predetermined period of time after the temperature of the polishing pad reaches the set temperature, a polishing abnormality is determined. |
