发明名称 METHOD OF FORMING INSULATION FILM
摘要 PROBLEM TO BE SOLVED: To provide a method, etc. of forming an insulation film to be used for electronic devices and having good film characteristics including a low dielectric constant, a high mechanical strength, and a high heat resistance. SOLUTION: This method relates to manufacturing the insulation film which includes a process (1) of applying a composition for film formation which contains a compound having a cage structure onto a substrate and then drying it, and a process (2) of irradiating the composition for film formation with electron beams or electromagnetic waves having a wavelength of 200 nm or larger. The insulation film formed by this manufacturing method and an electronic device having the insulation film are also presented. It is preferred that the composition for film formation contains a compound having a photosensitivity to electron beams or electromagnetic waves having a wavelength of 200 nm or larger and that the compound having a cage structure has a functional group having a photosensitivity to electron beams or electromagnetic waves having a wavelength of 200 nm or larger. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008091559(A) 申请公布日期 2008.04.17
申请号 JP20060269803 申请日期 2006.09.29
申请人 FUJIFILM CORP 发明人 MURAMATSU MAKOTO
分类号 H01L21/312;H01L21/768;H01L23/522 主分类号 H01L21/312
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