Methods of selectively etching silicon nitride are provided. Silicon nitride layers are exposed to a fluorinating gas and nitric oxide (NO), which may be formed by reacting nitrous oxide (N 2 O) and oxygen (O 2 ) in a plasma. Methods also include defluorinating the substrate prior to turning off the plasma to increase etch selectivity of silicon nitride.
申请公布号
SG10201510382Q(A)
申请公布日期
2016.07.28
申请号
SG10201510382Q
申请日期
2015.12.17
申请人
LAM RESEARCH CORPORATION
发明人
BERRY III, IVAN L.;ANGELOV, IVELIN A.;MARQUEZ, LINDA;YAQOOB, FAISAL;PARK, PILYEON;ZHU, HELEN H.;THEDJOISWORO, BAYU ATMAJA;LI, ZHAO