Reconfigurable Magnetoelectronic Processing Circuits

摘要

Magnetoelectronic circuits include Hybrid Hall Effect devices implemented with Spin Transfer Torque write capability. The circuits include reconfigurable processing systems, logic circuits, non-volatile switches, memory cells, etc.

主权项

1. A logic circuit implemented with magnetoelectronic devices and situated on a single semiconductor chip, comprising:
a processing circuit that includes at least one first Hall Effect device adapted to perform a first set of operations on data inputs during an operational mode; wherein said first Hall Effect device comprises a first magnetoelectronic structure including: i) a first ferromagnetic film having a configurable magnetization orientation; ii) a second ferromagnetic film having a fixed magnetization orientation; iii) a barrier film situated between said first ferromagnetic film and second ferromagnetic film and configured to conduct and impart a spin-torque transfer current to set a state for said configurable magnetization orientation in said first ferromagnetic film; further wherein said first Hall Effect device is a passive device that consumes substantially zero quiescent power in a non-operational mode; said processing circuit being adapted such it can be reconfigured dynamically during said operational mode to perform a second set of operations on data inputs.