发明名称 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE
摘要 A thin film transistor and manufacturing method thereof, an array substrate and a display device are disclosed. The thin film transistor includes a source electrode, a drain electrode and an active layer; the source electrode, the drain electrode and the active layer are disposed in a same layer, the source electrode and the drain electrode are separately joined to the active layer through their respective side faces, a material of the source electrode and the drain electrode is metal, and a material of the active layer is a metal oxide semiconductor in correspondence with material of the source electrode and the drain electrode. With the thin film transistor, procedures can be decreased, thereby reducing costs.
申请公布号 US2016372581(A1) 申请公布日期 2016.12.22
申请号 US201514905086 申请日期 2015.09.11
申请人 BOE TECHNOLOGY GROUP CO., LTD. ;HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD 发明人 SONG Botao;Lin Liang;ZOU Zhixiang;HUANG Yinhu
分类号 H01L29/66;H01L21/383;H01L29/786;H01L21/02 主分类号 H01L29/66
代理机构 代理人
主权项 1. A thin film transistor, comprising a source electrode, a drain electrode and an active layer; wherein the source electrode, the drain electrode and the active layer are disposed in the same layer, the source electrode and the drain electrode are separately joined to the active layer through their respective side faces, a material of the source electrode and the drain electrode is metal, and a material of the active layer is a metal oxide semiconductor in correspondence with the material of the source electrode and the drain electrode.
地址 Beijing CN