SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

The present disclosure provides a semiconductor device including a substrate, a first active region, a second active region, and a gate structure. The first active region and the second active region are disposed in the substrate. The gate structure includes a bottom, a first sidewall attached to the first active region, and a second sidewall attached to the second active region. The first sidewall and the bottom have a first point of intersection, and the first sidewall and a first horizontal line starting from the first point toward the substrate have a first included angle. The second sidewall and the bottom have a second point of intersection, and the second sidewall and a second horizontal line starting from the second point toward the substrate have a second included angle. The first included angle is different from the second included angle. A method for manufacturing a semiconductor device is provided herein.

主权项

1. A semiconductor device, comprising:
a substrate; a first active region and a second active region disposed in the substrate, wherein the first active region is a source electrode, the second active region is a drain electrode, and a depth of the source electrode is greater than a depth of the drain electrode; and a gate structure disposed in the substrate and between the first active region and the second active region, and the gate structure comprising:
a bottom;a first sidewall attached to the first active region, the first sidewall and the bottom having a first point of intersection, and the first sidewall and a first horizontal line starting from the first point toward the substrate having a first included angle; anda second sidewall attached to the second active region, the second sidewall and the bottom having a second point of intersection, and the second sidewall and a second horizontal line starting from the second point toward the substrate having a second included angle,wherein the first included angle is different from the second included angle.