| 发明名称 |
Stress Relieving Semiconductor Layer |
| 摘要 |
A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers. |
| 申请公布号 |
US2016211331(A1) |
申请公布日期 |
2016.07.21 |
| 申请号 |
US201615083423 |
申请日期 |
2016.03.29 |
| 申请人 |
Sensor Electronic Technology, Inc. |
发明人 |
Shatalov Maxim S.;Yang Jinwei;Sun Wenhong;Jain Rakesh;Shur Michael;Gaska Remigijus |
| 分类号 |
H01L29/15;H01L29/20;H01L29/06;H01L29/205 |
主分类号 |
H01L29/15 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device comprising:
an active region; a p-type contact layer located on a first side of the active region; and a n-type contact layer located on a second side of the active region opposite the first side, wherein the n-type contact layer is located between the active region and a semiconductor structure comprising:
a cavity containing layer, wherein the cavity containing layer is formed of a semiconductor material, has a thickness greater than two monolayers, and has a plurality of cavities, and wherein the plurality of cavities have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers. |
| 地址 |
Columbia SC US |
