| 摘要 |
Provided is a semiconductor device for performing photoelectric conversion of incident light, including: a p-type substrate ( 1 ), an n-type well ( 2 ) having a predetermined depth and formed in a predetermined region of the p-type substrate ( 1 ), and a depletion layer generated at a junction interface between the p-type substrate ( 1 ) and the n-type well ( 2 ). In the trenches ( 22 ) having a depth larger than that of a depletion layer (K<SUB>1</SUB>) generated on a bottom side of the n-type well ( 2 ) and a width larger than that of depletion layers (K<SUB>2</SUB>, K<SUB>3</SUB>) generated on sides of the n-type well ( 2 ) are provided so as to remove junction interfaces (J<SUB>2</SUB>, J<SUB>3</SUB>) on the sides of the n-type well ( 2 ), and an insulating layer ( 21 ) is buried in the trenches ( 22 ).
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