| 摘要 |
A method of fabricating a semiconductor device is provided to stably form a silicide layer, without being influenced by oxygen in atmosphere, even when a leakage path is formed in a processing chamber. A metal film(17) is formed on a substrate, in state a silicide forming region is exposed from a surface of the substrate. The substrate is subjected to heat treatment at pressure higher than atmospheric pressure to react silicon contained in the silicide forming region with the metal film, thereby forming silicide layers(18a,18b). The metal film which is not reacted with the silicide is removed by the heat treatment. The silicide layer is subjected to crystal phase transition by the heat treatment to lower the resistance of a semiconductor device.
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