| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, capable of removing residual metal in the inside or at the tip end of a capillary while preventing deterioration in productivity at a wire-bonding step. <P>SOLUTION: A method for manufacturing a semiconductor device, comprises: bonding a ball formed in one end side of a wire 11 to a pad electrode 2 to form a pressure-bonding ball 13 and a ball neck 15, and pressing the wire 11 to the ball neck 15 by a tip end 52 of a capillary 50 (a first bonding); moving the capillary 50 from a position above the pad electrode 2 to a position above a lead 23, and bonding the other end side of the wire 11 to the lead 23 (a second bonding); and, after repeating the first bonding and the second bonding a plurality of times in this order, moving the capillary 50 to a position above a dummy area R2 of a lead frame 20, and bonding the wire 11 to the dummy area R2 (a cleaning bonding). <P>COPYRIGHT: (C)2012,JPO&INPIT |
