发明名称 Optoelectronic semiconductor chip and method for production thereof
摘要 An optoelectronic semiconductor chip includes a semiconductor body and a carrier, on which the semiconductor body is arranged. The semiconductor body has a semiconductor layer sequence with an active region provided for generating or receiving radiation, a first semiconductor layer and a second semiconductor layer. The active region is arranged between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer is arranged on the side of the active region facing away from the carrier. A trench structure extends through the second semiconductor layer and the active region into the first semiconductor layer. An electrical contact structure with a plurality of contact strips is formed between the carrier and the semiconductor body. The contact strips in the trench structure are connected in an electrically conductive manner to the first semiconductor layer.
申请公布号 US9425358(B2) 申请公布日期 2016.08.23
申请号 US201314428937 申请日期 2013.09.12
申请人 OSRAM Opto Semiconductors GmbH 发明人 Pfeuffer Alexander F.
分类号 H01L33/38;H01L33/20;H01L33/48;H01L33/62;H01L31/0203;H01L31/0224;H01L31/02;H01L31/0352;H01L31/18 主分类号 H01L33/38
代理机构 Slater Matsil, LLP 代理人 Slater Matsil, LLP
主权项 1. An optoelectronic semiconductor chip comprising: a carrier; and a semiconductor body arranged on the carrier, wherein the semiconductor body has a semiconductor layer sequence having an active region provided for generating or receiving radiation, a first semiconductor layer, and a second semiconductor layer, wherein the active region is arranged between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer is arranged on a side of the active region facing away from the carrier, wherein a trench structure is formed in the semiconductor body, the trench structure extending through the second semiconductor layer and the active region into the first semiconductor layer, wherein an electrical contact structure having a plurality of contact webs is disposed between the carrier and the semiconductor body, wherein the contact webs are electrically conductively connected to the first semiconductor layer in the trench structure, wherein a terminal layer adjoins the second semiconductor layer and the contact structure, and wherein the terminal layer and the contact structure are arranged without overlap in relation to one another in a top view of the semiconductor chip.
地址 Regensburg DE