| 摘要 |
The device has an electrically conducting contact arranged between two photodetectors (1) e.g. PN or NP type photodiodes, in an alignment of an organization axis (X). The contact has an electrically conducting bump that is arranged on a P-type semiconductor substrate (6) and connected to a bias voltage generator (3) to apply bias voltage (V-SUB) to the substrate. The contact comprises a P-type area that allows passage of electric charges between the bump and the substrate, and an N-type area arranged in contact with the bump. The N-type area forms a ring around the P-type area. A metallic line connects each photodetector with a reading circuit (4) such as direct injection, buffered direct injection or capacitive trans-impedance amplifier circuit. An independent claim is also included for a method for fabricating a detection matrix. |
