| 摘要 |
PROBLEM TO BE SOLVED: To provide a phase shift mask blank, a phase shift mask and a manufacturing method of a phase shift mask, capable of improving a level difference of a phase shift film of a phase shift mask manufactured using a hard mask, and allowing suppression of residue of the hard mask and dry etching correction of the residue of the hard mask.SOLUTION: A phase shift mask blank is obtained through sequentially laminating a phase shift film, a light-shielding film and a hard mask on a substrate transparent to an exposure wavelength. The phase shift film and the light-shielding film are made of a material substantially impossible to etch by a dry etching capable of etching the hard mask. The phase shift film and the hard mask are made of a material substantially impossible to etch by a dry etching capable of etching the light-shielding film. The light-shielding film is made of a material substantially impossible to etch by a dry etching capable of etching the phase shift film. |
