| 摘要 |
A method for forming a semiconductor device is provided to prevent misalignment between a recess gate region and a gate electrode by forming a recess gate using a damascene structure. An oxide pattern is formed on a substrate(100) to expose a gate forming region. By recessing the exposed substrate using a photoresist pattern as a mask, a damascene structure(160) composed of the oxide pattern and the recessed substrate is then formed. A gate oxide layer(170) is formed, after the photoresist pattern is eliminated. A Ti/TiN layer(175) is formed on the gate oxide layer. A TiSix layer is formed by annealing the Ti/TiN layer. A tungsten gate electrode(185) is then filled in the damascene structure. The oxide pattern is removed. A nitride spacer(195) is formed at both sidewalls of the gate electrode.
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